Depletion implant for power MOSFET

Details Depletion implant for power MOSFET Depletion implant for power MOSFET

2006-08-15

2006-08-15

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S271000

Reexamination Certificate

active

07091080

ABSTRACT:
A vertical MOSFET has a substrate of a first conductivity type. A channel region of a second conductivity type is diffused into the substrate. A gate is disposed at least partially over the channel region. A source region of a second conductivity type is disposed proximate to the gate and adjacent to the channel region. The channel region includes a depletion implant area proximate to the gate. The depletion implant species is of the second conductivity type to reduce the concentration of the first conductivity type in the channel region without increasing the conductivity in the drain/drift region.

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