Depleted gate transistor for high voltage operation

Details Depleted gate transistor for high voltage operation Depleted gate transistor for high voltage operation

1995-11-16

1997-06-10

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257413, 438217, H01L 2976, H01L 2994

Patent

active

056379030

ABSTRACT:
A process for fabricating MOSFET structures, using one gate oxide thickness, but resulting in both low and high operating voltage devices, has been developed. A fabrication sequence is described illustrating the process that allows the formation of a depleted gate polysilicon structure, resulting in high operating voltages, and doped polysilicon gate structures, resulting in lower operating voltages.

REFERENCES:
patent: 4822749 (1989-04-01), Flanner et al.
patent: 4873204 (1989-10-01), Wong et al.
patent: 4937657 (1990-06-01), DeBlasi et al.
patent: 5047358 (1991-09-01), Kosiak et al.
patent: 5121186 (1992-06-01), Wong et al.
patent: 5312768 (1994-05-01), Gonzalez
patent: 5340761 (1994-08-01), Loh et al.

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