Densifying a relatively porous material

Details Densifying a relatively porous material Densifying a relatively porous material

2006-07-04

2006-07-04

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21038, C257SE21278

Reexamination Certificate

active

07071126

ABSTRACT:
An interlayer dielectric may be exposed to a gas cluster ion beam to densify an upper layer of the interlayer dielectric. As a result, the upper layer of the interlayer dielectric may be densified without separate deposition steps and without the need for etch stops that may adversely affect the capacitance of the overall structure.

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