Demultiplexers using transistors for accessing memory cell...

Details Demultiplexers using transistors for accessing memory cell... Demultiplexers using transistors for accessing memory cell...

2008-07-01

2008-07-01

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE27075

Reexamination Certificate

active

07393739

ABSTRACT:
A demultiplexer using transistors for accessing memory cell arrays. The demultiplexer includes (a) a substrate; (b) 2Nsemiconductor regions which are parallel to one another and run in a first direction; (c) first N gate electrode lines, which (i) run in a second direction which is perpendicular to the first direction, (ii) are electrically insulated from the 2Nsemiconductor regions, and (iii) are disposed between the first plurality of memory cells and the contact region; (d) a contact region; (e) a first plurality of memory cells. An intersection transistor exists at each of intersections between the first N gate electrode lines and the 2Nsemiconductor regions. In response to pre-specified voltage potentials being applied to the contact region and the first N gate electrode lines, memory cells of the first plurality of memory cells disposed on only one of the 2Nsemiconductor regions are selected.

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