Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-09
2007-01-09
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21579, C257SE23151, C257SE23169
Reexamination Certificate
active
10603041
ABSTRACT:
The invention includes a process for manufacturing an integrated circuit, comprising providing a substrate comprising a dielectric layer over a conductive material, depositing a hardmask over the dielectric layer, applying a first photoresist over the hardmask and photodefining a trench, etching the hard mask and partially etching the dielectric to form a trench having a bottom, stripping the photoresist, applying a second photoresist and photodefining a slit across the trench, selectively etching the dielectric from the bottom of the trench down to the underlying conductive material. Both the hardmask and the second photoresist are used as a mask. Later, a connection to the underlying metal is formed and integrated circuits made thereby.
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Lytle Steven Alan
Wolf Thomas Michael
Yen Allen
Agere Systems Inc.
Ghyka Alexander
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