Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1995-12-29
1997-08-12
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Bad bit
36523006, 3652257, G11C 700
Patent
active
056572808
ABSTRACT:
A defective cell repairing circuit for repairing a defective cell in a packaged semiconductor memory device enables repair mode operations for mapping an address of a detected defective cell to a redundant cell. The address of the defective cell is programmed by selectively cutting fuses corresponding to each bit of the defective cell address. The defective cell address programming operation uses input terminals on the packaged semiconductor memory device which are used for address signals in a normal operation mode, so that no additional pins are required. Repair mode operations are prevented after the repair mode is completed. Thereafter, an external address supplied to the semiconductor memory device is compared with the programmed defective cell address determined by the state of the fuses, and a redundant cell is selected if the two addresses correspond.
REFERENCES:
patent: 5359561 (1994-10-01), Sakomura et al.
Seok Yong-Sik
Shin Choong-Sun
Popek Joseph A.
Samsung Electronics Co,. Ltd.
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