Deep UV lift-off resist process

Details Deep UV lift-off resist process Deep UV lift-off resist process

1992-09-21

1994-11-01

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430 7, 430156, 430326, 430329, 430330, G03F 730, G03C 500

Patent

active

053606981

ABSTRACT:
A lithographic patterning process which produces a lift-off structure uses two separate layers, the bottom being deep ultraviolet patternable and the top being patternable at an appropriate wavelength other than deep ultraviolet and having low optical transmission properties at the wavelength used in a deep ultraviolet exposure step and characterized by decreased solubility and/or increased crosslink density after such deep ultraviolet exposure.

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patent: 4256816 (1981-03-01), Dunkleberger
patent: 4533624 (1985-08-01), Sheppard
patent: 4534620 (1985-08-01), Gale et al.
patent: 4557797 (1985-12-01), Fuller et al.
patent: 5227280 (1993-07-01), Jubinsky
W. M. Kramer and D. M. Hoffman, J. of Imaging Technology, vol. 12, No. 5, Oct. 1986.
Frary and Seese, Semiconductor International, pp. 72-88, Dec. 1981.

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