Deep u.v. photoresist process utilizing compositions containing

Details Deep u.v. photoresist process utilizing compositions containing Deep u.v. photoresist process utilizing compositions containing

1989-06-29

1991-08-13

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430330, 430165, 430192, 430193, G03C 500, G03C 152

Patent

active

050395963

ABSTRACT:
Photosensitizers containing saturated and unsaturated polycyclic compounds containing the cyclopentane-2-diazo-1,3-dione structural unit.
These compounds have their maximum u.v. absorption at around 248 nm, decompose into polar products upon irradiation, and can be used as photosensitizers in positive deep u.v. or excimer laser (248 nm) lithography. They are most preferably useful with deep u.v. transparent resins for forming photoresists.

REFERENCES:
patent: 4284706 (1981-08-01), Clecak et al.
patent: 4339522 (1982-07-01), Balanson et al.
patent: 4522911 (1985-06-01), Clecak
patent: 4571375 (1986-02-01), Benedikt
patent: 4622283 (1986-11-01), Gray
patent: 4624908 (1986-11-01), Schwartzkopf
patent: 4626491 (1986-12-01), Gray
patent: 4735885 (1988-04-01), Hopf
patent: 4812880 (1989-03-01), Ogawa
patent: 4853315 (1989-08-01), McKean
Current Abstracts, vol. 66, No. 2, #258014 (7-13-1977), Kasai et al.
Korobitsyna, I. K. et al. Zhi Org. Khim., 12, pp. 1245-1260, 1976.
Patent Abstracts of Japan, vol. 3, No. 3 (C-33) 16 Jan. 1979, & JP-A-53 127496 (Idemitsu Kosan K. K.).
Chemical Abstracts, vol. 112, No. 4, 22 Jan. 1990 p. 479, ref. no. 27928B.
Chemical Abstracts 89: 179563.
Chemical Abstracts 88: 152079n.
Chemical Abstracts 87: 22505s.
Chemical Abstracts 107: 77166u.
Chemical Abstracts 102: 184613f.
Chemical Abstracts 99: 53746y.
Chemical Abstracts 90: 121295s.
Chemical Abstracts 90: 103809h.
Chemical Abstracts 89: 179563y.

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