Deep trench structure manufacturing process

Details Deep trench structure manufacturing process Deep trench structure manufacturing process

2006-04-25

2006-04-25

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S389000, C438S390000, C438S424000

Reexamination Certificate

active

07033885

ABSTRACT:
Disclosed is a method for manufacturing deep trench structure comprising the steps of providing a substrate; forming a deep trench in the substrate; forming a nitride layer in the deep trench; filling the deep trench with a first conductive layer; removing a portion of the nitride layer not covered by the first conductive layer; refilling the deep trench with another nitride layer so that the sidewall of the deep trench not covered by the first polymer, is covered; partially removing the refilled nitride layer; forming a collar oxide layer in the deep trench; filling the deep trench with a second conductive layer; removing a portion of the collar oxide layer not covered by the second conductive layer; and filling the deep trench with a third conductive layer.

REFERENCES:
patent: 6080618 (2000-06-01), Bergner et al.
patent: 6815307 (2004-11-01), Hsu et al.
patent: 6838334 (2005-01-01), Gluschenkov et al.
patent: 2005/0106831 (2005-05-01), Hsu et al.

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