Deep trench formation in semiconductor device fabrication

Details Deep trench formation in semiconductor device fabrication Deep trench formation in semiconductor device fabrication

2006-07-20

2009-08-11

Purvis, Sue (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S736000, C438S739000, C257SE21035, C257SE21023

Reexamination Certificate

active

07573085

ABSTRACT:
A semiconductor structure. The structure includes (a) a semiconductor substrate; (b) a hard mask layer on top of the semiconductor substrate; and (c) a hard mask layer opening in the hard mask layer. The semiconductor substrate is exposed to the atmosphere through the hard mask layer opening. The hard mask layer opening comprises a top portion and a bottom portion, wherein the bottom portion is disposed between the top portion and the semiconductor substrate. The bottom portion has a greater lateral width than the top portion.

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