Deep trench (DT) metal-insulator-metal (MIM) capacitor

Details Deep trench (DT) metal-insulator-metal (MIM) capacitor Deep trench (DT) metal-insulator-metal (MIM) capacitor

2008-03-24

2010-06-22

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S238000, C438S239000, C438S243000, C438S399000, C438S957000, C257S296000, C257S301000, C257S347000

Reexamination Certificate

active

07741188

ABSTRACT:
A deep trench metal-insulator-metal (MIM) capacitor in an SOI-type substrate. In the deep trench, a layer of TiN, followed by a layer of high-k dielectric, followed by a second layer of TiN. The resulting capacitor is completely buried below the SOI layer, thereby allowing for subsequent structures to be placed over the deep trench.

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