Deep trench cell capacitor with inverting counter electrode

Details Deep trench cell capacitor with inverting counter electrode Deep trench cell capacitor with inverting counter electrode

1996-07-30

1998-08-11

Nelms, David C.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257301, 257300, H01L 27108

Patent

active

057930759

ABSTRACT:
The preferred embodiment provides an integrated circuit capacitor that achieves a high capacitance by using an inversion layer in the substrate as the plate counter electrode for the capacitor. The inversion layer is created by forming a trench capacitor in a lightly doped substrate. With a sufficient workfunction difference between the storage node material and the isolation band the surface of the lightly doped substrate inverts, with the inversion charge being supplied by the isolation band. This inversion layer serves as the plate counter electrode for the capacitor.

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