Deep trench capacitor having increased surface area

Details Deep trench capacitor having increased surface area Deep trench capacitor having increased surface area

2005-10-18

2005-10-18

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S245000, C438S387000, C438S388000, C438S627000, C438S643000, C438S653000

Reexamination Certificate

active

06955962

ABSTRACT:
A method of fabricating a trench capacitor of a memory cell, includes providing a semiconductor substrate with a surface covered by a pad layer, forming a trench in the substrate, forming a first layer on the pad layer and on the surface of the trench, removing a portion of the first layer to form a residual first insulating layer, forming a first conductive layer on the residual first layer, removing a portion of the first conductive layer, removing a portion of the residual first layer, driving out charged elements from the first layer into the semiconductor substrate, to form a first doped substrate region, removing the first layer, forming a node nitride on the trench, forming a second conductive layer on the pad layer and on the trench, removing a portion of the second conductive layer to form a second doped substrate region in the trench.

REFERENCES:
patent: 6677197 (2004-01-01), Kudelka et al.

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