Deep sub-micron polysilicon gap formation

Details Deep sub-micron polysilicon gap formation Deep sub-micron polysilicon gap formation

1996-03-27

1998-12-22

Fourson, George R.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438587, 438412, 438700, 438947, H01L 2176

Patent

active

058518878

ABSTRACT:
A method for forming a gap in a silicon layer is described. A silicon layer is formed over a substrate. A nitride layer is formed over the silicon layer and an oxide layer is formed over the silicon layer, adjacent to the nitride layer. A portion of the oxide layer is then removed to form an exposed region of the silicon layer. Then an etchant is applied to the exposed region to form an gap of the silicon layer.

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Stanley Wolf Ph.D and Richard N. Tauber Ph.D., "Silicon Progressing For The VLSI Era", Process Technology, Lattice Press, Lattice Press, pp. 3-12.

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