Deep N wells in triple well structures and method for...

Details Deep N wells in triple well structures and method for... Deep N wells in triple well structures and method for...

2006-05-30

2006-05-30

Abraham, Fetsum (Department: 2826)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S245000, C438S282000, C438S300000, C438S302000

Reexamination Certificate

active

07052966

ABSTRACT:
A disclosed method for fabricating a structure in a semiconductor die comprises steps of implanting a deep N well in a substrate, depositing an epitaxial layer over the substrate, and forming a P well and a lateral isolation N well over the deep N well, wherein the lateral isolation N well and the P well are fabricated in the substrate and the epitaxial layer, and wherein the lateral isolation N well laterally surrounds the P well, and wherein the deep N well and the lateral isolation N well electrically isolate the P well. Implanting a deep N well can comprise steps of depositing a screen oxide layer over the substrate, forming a mask over the screen oxide layer, implanting the deep N well in the substrate, removing the mask, and removing the screen oxide layer. Depositing the epitaxial layer can comprise depositing a single crystal silicon over the substrate.

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