Deep buried channel junction field effect transistor (DBCJFET)

Details Deep buried channel junction field effect transistor (DBCJFET) Deep buried channel junction field effect transistor (DBCJFET)

2008-03-25

2008-03-25

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S186000, C257S134000

Reexamination Certificate

active

11440773

ABSTRACT:
A junction field effect transistor (JFET) is fashioned where a channel of transistor is buried deeply within the workpiece within which the JFET is formed. Burying the channel below the surface of the workpiece and/or away from overlying conductive materials distances a current that flows in the channel from outside influences, such as the effects of the overlying conductive materials. The deep channel also provides a more regular path for the current flowing therein by moving the channel away from non-uniformities on or near the surface of the workpiece, where said non-uniformities or irregularities would interrupt or otherwise disturb current flowing in a channel that is not as deep. These aspects of the deep channel serve to reduce noise and allow the transistor to operate in a more repeatable and predictable manner, among other things.

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