Decoupling capacitor for high frequency noise immunity

Details Decoupling capacitor for high frequency noise immunity Decoupling capacitor for high frequency noise immunity

2005-10-18

2005-10-18

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C977S726000

Reexamination Certificate

active

06955960

ABSTRACT:
Systems and methods are provided for an on-chip decoupling device and method. One aspect of the present subject matter is a capacitor. One embodiment of the capacitor includes a substrate, a high K dielectric layer doped with nano crystals disposed on the substrate, and a top plate layer disposed on the high K dielectric layer. According to one embodiment, the high K dielectric layer includes Al2O3. According to other embodiments, the nano crystals include gold nano crystals and silicon nano crystals. One capacitor embodiment includes a MIS (metal-insulator-silicon) capacitor fabricated on silicon substrate, and another capacitor embodiment includes a MIM (metal-insulator-metal) capacitor fabricated between the interconnect layers above silicon substrate. The structure of the capacitor is useful for reducing a resonance impedance and a resonance frequency for an integrated circuit chip. Other aspects are provided herein.

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