Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2007-07-24
2007-07-24
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S219000, C361S056000, C257S173000, C257S371000
Reexamination Certificate
active
11072014
ABSTRACT:
A decoupling capacitor with increased resistance to electrostatic discharge (ESD) is provided on an integrated circuit (IC). The capacitor may be single or multi-fingered. In one example, the capacitor includes first and second electrodes separated by a dielectric material, a source positioned proximate to the first electrode, and a floating drain positioned proximate to the first electrode and separated from the source by the first electrode. A parasitic element, modeled as a bipolar junction transistor (BJT), is formed by current interactions between the source, the floating drain, and a doped area. The floating drain provides a constant potential region at the base of the BJT, which minimizes ESD damage to the IC.
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Chen Shui-Hung
Lee Jian-Hsing
Shih Jiaw-Ren
Goodwin David
Haynes and Boone LLP
Huynh Andy
Taiwan Semiconductor Manufacturing Company , Ltd.
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