Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1996-10-24
1998-10-20
Beck, Shrive
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427534, 427574, 427579, 134 11, 134 12, 1566431, H05H 124, B08B 600
Patent
active
058243755
ABSTRACT:
A method and apparatus for reducing fluorine and other sorbable contaminants in plasma reactor used in chemical vapor deposition process such as the deposition of silicon oxide layer by the reaction of TEOS and oxygen. According to the method of the present invention, plasma of an inert gas is maintained in plasma reactor following chamber clean to remove sorbable contaminants such as fluorine. The plasma clean is typically followed by seasoning of the reactor to block or retard remaining contaminants. According to one embodiment of the invention, the combination of chamber clean, plasma clean, and season film is conducted before PECVD oxide layer is deposited on wafer positioned in the plasma reactor.
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Applied Materials Inc.
Barr Michael
Beck Shrive
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