Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-11
2010-10-26
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S478000, C438S489000, C257SE21120, C257SE21561, C117S043000
Reexamination Certificate
active
07820501
ABSTRACT:
Accordingly, in one embodiment of the invention, a method is provided for reducing stacking faults in an epitaxial semiconductor layer. In accordance with such method, a substrate is provided which includes a first single-crystal semiconductor region including a first semiconductor material, the first semiconductor region having a <110> crystal orientation. An epitaxial layer including the first semiconductor material is grown on the first semiconductor region, the epitaxial layer having the <110> crystal orientation. The substrate is then annealed with the epitaxial layer at a temperature greater than 1100 degrees Celsius in an ambient including hydrogen, whereby the step of annealing reduces stacking faults in the epitaxial layer.
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Black Linda
Domenicucci Anthony G.
Fried David M.
Holt Judson R.
Sheraw Christopher D.
GlobalFoundries, Inc
International Business Machines - Corporation
Kebede Brook
MacKinnon Ian D.
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