Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-29
2000-02-29
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257318, 257407, 257306, 438257, H01L 2906
Patent
active
060312637
ABSTRACT:
A floating gate transistor has a reduced barrier energy at an interface between a gallium nitride (GaN) or gallium aluminum nitride (GaAlN) floating gate an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the floating gate is reduced. The data stored on the floating gate is dynamically refreshed. The floating gate transistor provides a dense and planar dynamic electrically alterable and programmable read only memory (DEAPROM) cell adapted for uses such as for a dynamic random access memory (DRAM) or a dynamically refreshed flash EEPROM memory. The floating gate transistor provides a high gain memory cell and low voltage operation.
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Ahn Kie Y.
Forbes Leonard
Micro)n Technology, Inc.
Monin, Jr. Donald L.
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