De-fluoridation process

Details De-fluoridation process De-fluoridation process

2007-12-18

2007-12-18

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S437000, C438S731000, C438S766000, C257SE21235

Reexamination Certificate

active

11545903

ABSTRACT:
A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Fluorine is removed from the conformal layer, while the remaining conformal layer is left in place. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.

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Eric Eisenbraun et al., “Atomic Layer Deposition (ALD) of Tantalum-based Materials for Zero Thickness Copper Barrier Application”, Proceedings of IEEE (2001) p. 207-209.

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