Data writing method for mask read only memory

Details Data writing method for mask read only memory Data writing method for mask read only memory

2006-08-01

2006-08-01

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S290000

Reexamination Certificate

active

07084036

ABSTRACT:
A data writing method for mask read only memory using different doses of ion implantations to perform the data writing of Mask Read Only Memory. A semiconductor substrate having a plurality of gate structures is provided. The different ion implantations are performed depending on the mask from the user, thereby generating the different voltage output values. The different voltage output values are set as (00), (01), (10), and (11) for the bit output. Therefore, the present invention reduces the area of memory required for a specific data record, and lowers the production cost.

REFERENCES:
patent: 6180463 (2001-01-01), Otsuki
patent: 6184094 (2001-02-01), Goto

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