Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2004-06-28
2008-10-28
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S194000, C365S189011, C365S230060
Reexamination Certificate
active
07443738
ABSTRACT:
Provided is directed to a circuit for controlling data and a data strobe driver in a semiconductor memory device, including: a first delay unit for outputting a data signal with a variable delay; a DQ driver for outputting a data signal according to the data signal passed through the first delay unit and a driver select signal; a second delay unit for outputting a data strobe signal with a variable delay; and a DQS driver for outputting the data strobe signal passed through the second delay unit by being driven according to the driver select signal.
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Kim Kwan Weon
Kwack Seung Wook
Hynix / Semiconductor Inc.
Le Thong Q
Marshall & Gerstein & Borun LLP
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