Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2008-03-18
2008-03-18
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S230010
Reexamination Certificate
active
10739090
ABSTRACT:
A data storage circuit having a plurality of memory cells (S1), a plurality of bit lines (BL, /BL) and a precharge circuit further comprises a discharge circuit. In an operating mode of the data storage circuit, the bit lines (BL, /BL) are precharged by the precharge circuit under the control on the basis of a chip enable signal (CE) before write or read of data into/from the memory cells (S1) and in a standby state, the bit lines (BL, /BL) are discharged by the discharge circuit. Further, also in a sleep mode, the bit lines (BL, /BL) are discharged by the discharge circuit. With this circuit configuration and operation, it is possible to provide the data storage circuit which allows reduction in standby power consumption by suppressing standby currents in the standby state.
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Le Thong Q.
Renesas Technology Corp.
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