Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2005-06-07
2005-06-07
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S158000, C365S207000
Reexamination Certificate
active
06903989
ABSTRACT:
Data sensing circuits for a magnetic memory cell include a current source circuit that selectively supplies a current to the magnetic memory cell. A first storage device selectively coupled to the magnetic memory cell stores a voltage representing a state of the magnetic memory cell. A second storage device selectively coupled to the magnetic memory cell stores a voltage representing a state of the magnetic memory cell. A differential voltage sense circuit coupled to the first and second storage device that is configured to generate a sensed data output signal for the magnetic memory cell responsive to sensing a difference between voltages stored in the first and second storage devices. A control circuit generates control signals to control the current source to supply current to the magnetic memory cell and to control the coupling of the first and second storage devices to the magnetic memory cell. Magnetic memories and methods are also provided.
REFERENCES:
patent: 6525978 (2003-02-01), Weber et al.
patent: 6661708 (2003-12-01), Cernea et al.
patent: 2003/0214868 (2003-11-01), Baker
Hoang Huan
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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