Data read circuit used in semiconductor storage device

Details Data read circuit used in semiconductor storage device Data read circuit used in semiconductor storage device

1995-12-15

1997-09-23

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

36518909, 36518911, 365203, G11C 700

Patent

active

056711816

ABSTRACT:
When a data is read out from a memory cell, a current mirror circuit is operated in response to detection of potential variation of a first data line, so that charge of a second data line is discharged by the current mirror circuit. At this point, a control transistor interposed between the first data line and the second data line is operated in a saturation region. As a result, the impedance between the first data line and the second data line becomes substantially infinity, and the two data lines are substantially open-circuited. Thus, the current mirror circuit discharges merely the second data line with a small load capacitance in a short period of time, resulting in a high speed read operation. Therefore, even when the first data line, to which a large number of memory cells are connected, has a large load capacitance, the read rate is increased.

REFERENCES:
patent: 5115412 (1992-05-01), Tobita
patent: 5408438 (1995-04-01), Tanaka et al.

Affiliated with

Also associated with

Rating

Data read circuit used in semiconductor storage device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Data read circuit used in semiconductor storage device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Data read circuit used in semiconductor storage device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1940904