Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2007-06-05
2007-06-05
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S194000, C365S233100, C327S155000
Reexamination Certificate
active
11316848
ABSTRACT:
In a data output circuit, a data output method, and a semiconductor memory device, the data output circuit includes: an internal clock generation unit that delays an external clock signal by a first delay time to output an internal clock signal in response to the external clock signal and a replica data strobe signal; a data strobe signal output unit that outputs a data strobe signal in response to the internal clock signal; and a data strobe signal replication unit that delays the internal clock signal by a second delay time to output the replica data strobe signal and changing the second delay time in response to the data strobe signal and the replica data strobe signal. Accordingly, it is possible to save time and effort required for setting a delay time of a data strobe signal replication unit. In addition, it is possible to correct differences between packages of the delay time of the data strobe signal output unit.
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Mai Son L.
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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