Data line termination circuits and integrated circuit...

Electronic digital logic circuitry – Signal sensitivity or transmission integrity – Bus or line termination

Reexamination Certificate

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C326S083000, C326S086000

Reexamination Certificate

active

06218854

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to integrated circuits, and more particularly to data line termination circuits for integrated circuits that can reduce ringing of a signal occurring when logic level of the signal is changed.
BACKGROUND OF THE INVENTION
Integrated circuit devices, such as, processors and memories operating at high speeds, and/or devices which use relatively long conductive interconnections, may suffer from reduced performance. In particular, overshoot signal reflection or transmission line effect problems may occur, thereby reducing performance.
For example, when a zero volt signal is changed to a five volt signal on a conductor or bus which is long in length or has a fast edge rate, and if the bus or conductive line is not properly impedance-matched, the conductive line or bus may take some time to settle to the 5 volt value from the 0 volt value due to one or more reflections taking place one or both ends of the bus.
As manufacturing techniques of semiconductor devices improve, operational speed may also increase. Typical rise times (or lead times) and fall times (or trail times) for various semiconductor manufacturing techniques are listed in the following Table 1.
TABLE 1
Manufacturing
technique
Rise time (on-chip)
Rise time (chip to chip)
CMOS

0.5-2.0 micro second
  2-4 micro second
Bipolar
50-200 pico second
200-400 pico second
GaAs
20-100 pico second
100-250 pico second
When the rise time “tr” and the fall time “tf” are reduced by 2.5 times shorter than a data line delay time “td”, the received signal to a receiver may be distorted. This is because when the input impedance and the characteristic impedance of the data line are not matched, the transmitted signal to the receiver may be reflected to the transmitter through the data line. When (2.5*td)>tr or (2.5*td)>tf, a transmitted signal from a transmitter may already settle to a desired level, such as a stable level of 0V or Vcc.
However, since the delay time of a data line is longer than the rise and fall time, the reflected signal to the transmitter may overlap the stable signal before the transmitting signal is transmitted to the receiver, and thereby reflecting to the input signal of the receiver. The above sequential process may repeatedly take place from the rising edge or the falling edge of the transmitting signal.
FIG. 1
is a waveform illustrating an example of ringing of the input signal of a receiving integrated circuit device or a receiver in accordance with an output signal of a transmission integrated circuit device or a transmitter during signal transmission between conventional integrated circuit devices. As shown in
FIG. 1
, the received signal is hardly distorted. However, the signal transmitted to the receiver may be unusable, due to ringing.
In order to reduce the above-described distortion, impedance matching may be adapted to a data line between the integrated circuit devices. Serial or parallel matching may be used.
Serial adaptation or a serial matching is provided by matching the output impedance of the transmitter to the characteristic impedance of the data line and maintaining an open state for the port near the receiver. However, the impedance of data line may be changed, so that it may be difficult to control.
Parallel matching is provided by matching the impedance of receiver to the characteristic impedance of the data line. However, in the parallel matching scheme, power in the static state may be consumed and a signal having a reduced deviation at the output port of the data line may be used. Furthermore, in parallel matching, the signal transmission between the integrated circuits may have a heterogenous structure that is difficult to match the input impedance of the receiver to the characteristic impedance of the data line.
FIG. 2
is a schematic view illustrating an example of a parallel matching scheme in conventional integrated circuit devices coupled to each other through a data line. A CMOS inverter
12
is provided in a transmitter
10
and used for an output buffer, and a CMOS inverter
16
is provided in a receiver
14
and used for an input buffer circuit.
The transmitter
10
is coupled to the receiver
14
through a data line
18
. A terminal resistor
20
is coupled between a power supply level (power source) Vdd and one side of the data line
18
near the receiver
14
. The terminal resistor
20
may be integrated inside the receiver
14
, or may be directly coupled to the data line
18
outside the receiver. Assume the characteristic impedance Zo of the data line
18
and the resistance of the terminal resistor
20
is matched to 50 ohm, and the delay time td of the data line
18
is 1 nS (nano second).
FIG. 3A
is a waveform illustrating signal V
22
at a node
22
of a side of a receiver in accordance with input signal A of a transmitter in the conventional integrated circuit devices coupled to each other through the data line as shown in FIG.
2
. The received signal V
22
is not disturbed according to the parallel matching of the above condition, thereby being similar to the transmitting signal A as shown in FIG.
3
A.
FIG. 3B
is a waveform illustrating dynamic current i
1
at one position
1
of a transmitter output buffer and the dynamic current i
2
at the other position
2
of the transmitter output buffer in the conventional integrated circuit devices coupled to each other through the data line as shown in FIG.
2
.
FIG. 3C
is a waveform illustrating the dynamic current ia of the data line in the conventional integrated circuit devices coupled to each other through the data line as shown in FIG.
2
.
As described above, although the received signal V
22
may not be distorted by the parallel matching scheme as shown in
FIG. 2
, the dynamic current ia flows in the data line as shown in FIG.
3
C. Therefore, the devices may consume large amounts of power during the signal transmission. Thus, the parallel matching scheme may not be adapted to low-power chip interconnection, such as are used in low-power consumption integrated circuit devices such as the processors and memories in portable computers, portable terminals, and portable telephones.
FIG. 4
is a schematic view illustrating another example of a parallel matching scheme in conventional integrated circuit devices coupled to each other through a data line. When the logic level of the input signal is changed from level 0 to 1 or from level 1 to 0, the impedance-matching scheme by a terminal device
34
is adapted to the data line between the integrated circuit devices as shown in FIG.
4
. Therefore, the terminal device
34
maintains the open state when the logic level stays at 1 or 0. This scheme is called a dynamic termination DT, and is known to those skilled in the art.
As shown in
FIG. 4
, a transmitter
24
has a CMOS inverter
26
as the output buffer circuit, and a receiver
28
has a CMOS inverter
30
as the input buffer circuit. The transmitter
24
is coupled to the receiver
28
through a data line
32
.
The terminal device
34
is coupled to one side node
40
of the data line
32
near the receiver
28
in parallel. The terminal device
34
has a resistor
36
and a capacitor
38
coupled to each other in series. The resistor
36
is coupled between the data line
32
and the capacitor
38
.
FIG. 5A
is a waveform illustrating a signal V
40
at a node
40
of a side of the receiver in accordance with input signal A of the transmitter in the conventional integrated circuit devices coupled to each other through the data line as shown in FIG.
4
.
FIG. 5B
is a waveform illustrating the dynamic current ia of the data line in the conventional integrated circuit devices coupled to each other through the data line as shown in FIG.
4
.
The signal V
40
of a node
40
at the side of the receiver may not be distorted as shown in
FIG. 5A
, but a dynamic current ia may still flow in the data line as shown in FIG.
5
B. Assume that the characteristic impedance Zo of the data line
32
and resistance of the terminal device
34
are

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