Damascene interconnect structure and fabrication method...

Details Damascene interconnect structure and fabrication method... Damascene interconnect structure and fabrication method...

2006-01-10

2006-01-10

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S411000, C438S421000, C438S422000

Reexamination Certificate

active

06984577

ABSTRACT:
A damascene interconnect that reduces interconnect intra-layer capacitance and/or inter-layer capacitance is provided. The damascene interconnect structure has air gaps between metal lines and/or metal layers. The interconnect structure is fabricated to a via level through a processing step prior to forming contact vias, then one or more air gaps are formed into the damascene structure so that the air gaps are positioned between selected metal lines. A sealing layer is then deposited over the damascene structure to seal the air gaps.

REFERENCES:
patent: 5708303 (1998-01-01), Jeng
patent: 6064118 (2000-05-01), Sasaki
patent: 6130151 (2000-10-01), Lin et al.
patent: 6159840 (2000-12-01), Wang
patent: 6177329 (2001-01-01), Pang
patent: 6184121 (2001-02-01), Buchwalter et al.
patent: 6204165 (2001-03-01), Ghoshal
patent: 6211057 (2001-04-01), Lin et al.
patent: 6211561 (2001-04-01), Zhao
patent: 6265321 (2001-07-01), Chooi et al.
patent: 6297125 (2001-10-01), Nag et al.
patent: 6350672 (2002-02-01), Sun
patent: 6492256 (2002-12-01), Lee et al.
patent: 6509623 (2003-01-01), Zhao
patent: 2002/0016058 (2002-02-01), Zhao
patent: 2002/0127844 (2002-09-01), Grill et al.
patent: 475646 (1992-03-01), None

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