Damascene formation of borderless contact MOS transistors

Details Damascene formation of borderless contact MOS transistors Damascene formation of borderless contact MOS transistors

1998-06-08

2000-01-18

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438221, 438299, 438303, 438585, H01L 218238

Patent

active

060157275

ABSTRACT:
This invention is a processing method for forming MOS transistors. The method uses chemical mechanical polishing to self align an MOS transistor gate electrode to the channel region in both the width and length directions. The method enables metal interconnect lines to make borderless connections to MOS gate electrodes directly over channel regions, and allows borderless connections to be made to source and drain regions, thereby improving layout density of small transistors. The method enables interconnect lines to be patterned on a planar surface, which facilitates the etching of very narrow and closely spaced lines. The method does not require any Shallow Trench Isolation (STI), and does not require Local Oxidation of Silicon (LOCOS), thereby resulting in little damage to the silicon. The method also prevents plasma damage of very thin gate dielectrics during processing.

REFERENCES:
patent: 5028555 (1991-07-01), Haskell
patent: 5721173 (1998-02-01), Yano et al.
patent: 5770485 (1998-06-01), Gardner et al.
patent: 5780325 (1998-07-01), Lee
patent: 5851883 (1998-12-01), Gardner et al.
patent: 5904529 (1999-05-01), Gardner et al.

Affiliated with

Also associated with

Rating

Damascene formation of borderless contact MOS transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Damascene formation of borderless contact MOS transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Damascene formation of borderless contact MOS transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-562740