Damascene finfet gate with selective metal interdiffusion

Details Damascene finfet gate with selective metal interdiffusion Damascene finfet gate with selective metal interdiffusion

2005-02-15

2005-02-15

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S249000, C257S250000, C257S270000, C257S314000, C257S347000, C257S385000, C257S407000, C438S588000, C438S193000, C438S201000, C438S149000, C438S282000

Reexamination Certificate

active

06855989

ABSTRACT:
A fin field effect transistor includes a fin, a source region, a drain region, a first gate electrode and a second gate electrode. The fin includes a channel. The source region is formed adjacent a first end of the fin and the drain region is formed adjacent a second end of the fin. The first gate electrode includes a first layer of metal material formed adjacent the fin. The second gate electrode includes a second layer of metal material formed adjacent the first layer. The first layer of metal material has a different work function than the second layer of metal material. The second layer of metal material selectively diffuses into the first layer of metal material via metal interdiffusion.

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