Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-03-20
2007-03-20
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257S440000, C257S294000, C257S292000
Reexamination Certificate
active
10904807
ABSTRACT:
An image sensor array and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack with improved thickness uniformity to result in a pixel array exhibiting increased light sensitivity. In the sensor array, each Cu metallization level includes a Cu metal wire structure formed at locations between each array pixel and, a barrier material layer is formed on top each Cu metal wire structure that traverses the pixel optical path. By implementing a single mask or self-aligned mask methodology, a single etch is conducted to completely remove the interlevel dielectric and barrier layers that traverse the optical path. The etched opening is then refilled with dielectric material. Prior to depositing the refill dielectric, a layer of either reflective or absorptive material is formed along the sidewalls of the etched opening to improve sensitivity of the pixels by either reflecting light to the underlying photodiode or by eliminating light reflections.
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Adkisson James W.
Gambino Jeffrey P.
Jaffe Mark D.
Leidy Robert K.
Stamper Anthony K.
Canale Anthony J.
Chiu Tsz
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Smith Zandra V.
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