Damage-free resist removal process for ultra-low-k processing

Details Damage-free resist removal process for ultra-low-k processing Damage-free resist removal process for ultra-low-k processing

2006-06-27

2006-06-27

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S790000, C438S706000, C438S709000

Reexamination Certificate

active

07067441

ABSTRACT:
A process for removing resist (114) from a CDO dielectric material (110) that uses a non-damaging plasma in a reducing atmosphere under high power and using a structure (150) or other means to limit ions from the plasma from reaching the surface of the CDO material (110).

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