CVD titanium silicide for contract hole plugs

Details CVD titanium silicide for contract hole plugs CVD titanium silicide for contract hole plugs

1997-10-20

1999-07-27

Meeks, Timothy

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, 438672, 438675, 438683, 438694, 438721, 4272552, 4272557, C23C 1642

Patent

active

059306718

ABSTRACT:
A method of filling contact holes in a dielectric layer on an integrated circuit wafer. The method reduces processing steps and results in a reliable metal plug filling the contact hole. In one embodiment the contact hole is filled using blanket deposition of titanium silicide using chemical vapor deposition followed by etchback. In a second embodiment the contact hole is filled with titanium silicide using selective chemical vapor deposition of titanium silicide. In a third embodiment an adhesion layer of titanium silicide is formed on the sidewalls and bottoms of the contact holes. A conductor metal of titanium silicide, aluminum, tungsten, or copper is used to fill the contact hole using selective chemical vapor deposition.

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