Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-31
2005-05-31
Meeks, Timothy (Department: 1762)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S685000, C427S576000, C427S124000, C427S126300, C427S253000, C427S255390, C427S255394, C427S255700
Reexamination Certificate
active
06900129
ABSTRACT:
A chemical vapor deposition (CVD) method for depositing high quality conformal tantalum (Ta) and tantalum nitride (TaNx) films from inorganic tantalum pentahalide (TaX5) precursors is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tantalum pentabromide (TaBr5). A TaX5vapor is delivered into a heated chamber. The vapor is combined with a process gas to deposit a Ta or TaNxfilm on a substrate that is heated to 300° C.-500° C. The deposited film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD.
REFERENCES:
patent: 2604395 (1952-07-01), Gonser et al.
patent: 3767456 (1973-10-01), Glaski
patent: 4535000 (1985-08-01), Gordon
patent: 4678769 (1987-07-01), King
patent: 4859617 (1989-08-01), Nomoto et al.
patent: 4882224 (1989-11-01), Moro et al.
patent: 4884123 (1989-11-01), Dixit et al.
patent: 5017403 (1991-05-01), Pang et al.
patent: 5173327 (1992-12-01), Sandhu et al.
patent: 5177589 (1993-01-01), Kobayashi et al.
patent: 5271963 (1993-12-01), Eichman et al.
patent: 5326404 (1994-07-01), Sato
patent: 5380678 (1995-01-01), Yu et al.
patent: 5444006 (1995-08-01), Han et al.
patent: 5466971 (1995-11-01), Higuchi
patent: 5565247 (1996-10-01), Suzuki
patent: 5919531 (1999-07-01), Arkles et al.
patent: 6139922 (2000-10-01), Kaloyeros et al.
patent: 6143657 (2000-11-01), Liu et al.
patent: 6197683 (2001-03-01), Kang et al.
patent: 0 077 535 (1983-04-01), None
patent: 0 875 924 (1988-11-01), None
patent: 010-74720 (1989-03-01), None
patent: 3-209869 (1991-09-01), None
patent: WO 96/12048 (1996-04-01), None
H. Funakubo et al.,Preparation of TaNx-TiN Films by CVD,J. Ceramic Soc. Jpn. Int. Ed. , vol. 98, pp. 173-178, Feb. 1990.
X. Chen et al.,Low Temperature Plasma-Assisted Chemical Vapor Deposition of Tantalum Nitride from Tantalum Pentabromide for Copper Metallization,J. Vac. Sci. Technol. B 17(1), pp. 182-185, Jan./Feb. 1999.
K. Hieber,Structural and Electrical Properties of Ta and Ta Nitrides Deposited by Chemical Vapour Deposition,Thin Solid Films, 24, pp. 157-164, 1974, no month available.
A. Kaloyeros et al.,Tantalum Nitride Films Grown by Inorganic Low Temperature Thermal Chemical Vapor Deposition,Journal of the Electrochemical Society, 146(1), pp. 170-176, 1999, no month available.
X. Chen et al.,Low Temperature Plasma-Promoted Chemical Vapor Deposition of Tantalum from Tantalum Pentbromide for Copper Metallization,J. Vac. Sci. Technol. B 16(5), pp. 2887-2890, Sep./Oct. 1998.
T. Takahashi et al.,Chemical Vapor Deposition of Tantalum Nitride Films,Journal of Less-Common Metals, 52, pp. 29-36, 1977, no month available.
Vlakhov et al.,Superconducting Properties of CVD Tantalum Films,Material Letters, vol. 6, No. 3, pp. 58-61, Dec. 1987.
Ugolini et al.,Photoelectron Spectroscopy Studies of Chemical Vapor Deposition of Ta from a TaF5Precursor on Si and SiO2Substrates,J. Appl. Phys. 70(7), pp. 3899-3906, Oct. 1991.
Bunshah,Deposition Technologies for Films and Coatings,Noyes Publications, Park Ridge, NJ, USA, pp. 365-366, 1982, no month available.
Hautala John J.
Westendorp Johannes F. M.
Meeks Timothy
Tokyo Electron Limited
Wood Herron & Evans LLP
LandOfFree
CVD of tantalum and tantalum nitride films from tantalum... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with CVD of tantalum and tantalum nitride films from tantalum..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD of tantalum and tantalum nitride films from tantalum... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3395719