CVD method of depositing copper films by using improved organoco

Details CVD method of depositing copper films by using improved organoco CVD method of depositing copper films by using improved organoco

1999-06-25

2000-08-29

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427124, 427252, 42725523, 42725528, 427250, C23C 1618

Patent

active

061105309

ABSTRACT:
Copper films having improved properties are deposited by chemical vapor deposition from an organocopper precursor of a blend of copper hexafluoroacetylacetonate trimethylvinylsilane and from about 1.0 to 5.0 percent by weight of trimethylvinylsilane that is vaporized in a vaporizer, and passed into a chemical vapor deposition chamber. Separately up to about 2 percent by weight of the precursor blend of water vapor is added directly to the chamber.

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Kim et al, J. Appl. Phys. 78(1), pp. 245-250, Jul. 1995.
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Hochberg et al, Chemical Additives for improved copper CVD processing using (HFAC)Cu(TMVS), Conf. Proced. ULSI-X, 1995, Materials REsearch Soc.
Jain et al, "Chemical Vapor Deposition of Copper from (hfac)CuL(L=VTMS and 2-Butyne)in the Presence of Wayter, Methanol and Dimethyl Ether", Chem. Mater. 1996, vol. 8, pp. 1119-1127.
Gelatos et al, "Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor", Appl. Phys. Lett. 63 (20) Nov. 15, 1993, pp. 2842-2844.

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