CVD doped structures

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

Reexamination Certificate

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Reexamination Certificate

active

07435665

ABSTRACT:
A new clean CVD growing process of dopant doped silicon layers comprising epitaxial silicon or polycrystalline silicon, has been developed. The process is occurring advantageously at a high growing temperature of 600-1250° C., having a phase in which silicon comprised halide is used as a silicon source gas with a dopant.

REFERENCES:
patent: 5877072 (1999-03-01), Andideh et al.
patent: 6346463 (2002-02-01), Sultan et al.
patent: 2003/0230233 (2003-12-01), Fitzgerald et al.
patent: 2005/0066892 (2005-03-01), Dip et al.
patent: 2005/0277272 (2005-12-01), Singh et al.

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