Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2004-10-06
2008-10-14
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Reexamination Certificate
active
07435665
ABSTRACT:
A new clean CVD growing process of dopant doped silicon layers comprising epitaxial silicon or polycrystalline silicon, has been developed. The process is occurring advantageously at a high growing temperature of 600-1250° C., having a phase in which silicon comprised halide is used as a silicon source gas with a dopant.
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Airaksinen Veli Matti
Hokkanen Maria Elina
Mulpuri Savitri
Okmetic Oyj
Patterson Thuente Skaar & Christensen P.A.
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