Static information storage and retrieval – Read/write circuit – Precharge
Patent
1997-03-07
1999-01-05
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
Precharge
365204, 365205, 365202, H01L 2910, H03K 3356
Patent
active
058569499
ABSTRACT:
An improved sense amplifier for RAM arrays is provided which reduces read operation access times, reduces static power consumption and reduces used silicon area. The improved sense amplifier includes an equalizing operation that brings the voltages on the output lines to a midpoint voltage prior to performing a read operation. By providing a midpoint voltage on the output lines, neither output line needs to transition a full rail from Vss to Vcc or vice versa during the amplifying operation, decreasing the amount of time required to read the memory cells.
REFERENCES:
patent: 4716320 (1987-12-01), McAdams
patent: 5422499 (1995-06-01), Manning
patent: 5487029 (1996-01-01), Kuroda
A 400MHz, 300mW, 8kb, CMOS SRAM Macro with a Current Sensing Scheme, by Izumikawa, M. et al., IEEE 1994 Custom Integrated Circuits Conference, pp. 595-598, May 1994.
Advanced Micro Devices , Inc.
Nguyen Viet Q.
Wisor Rita M.
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