Current sense amp for static memory cell

Details Current sense amp for static memory cell Current sense amp for static memory cell

1976-01-30

1977-12-06

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Precharge

307238, 365190, 365202, 365205, G11C 700, G11C 706

Patent

active

040620000

ABSTRACT:
A MOSFET random access memory having a highly sensitive sense amplifier is disclosed. The sense amplifier utilizes a field effect transistor connected in the common gate mode so as to produce a large output swing on a reltively low capacitance output node, which is the drain node of the transistor, as a result of a relatively low voltage swing produced by reading data stored in a memory cell on a high capacitance column bus connected to the source of the transistor. The sense amplifier is shown in differential configuration with a low power level shifting circuit and also with both static memory cells, where a greatly improved access time is produced, and with destructive readout cells where improved reliability is possible.

REFERENCES:
patent: RE28905 (1976-07-01), Hodges
patent: 3795898 (1974-03-01), Mehta et al.
patent: 3879621 (1975-04-01), Cavaliere et al.
patent: 3919566 (1975-11-01), Millhollan et al.

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