Current driven switching of magnetic storage cells utilizing...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S207000, C365S209000, C365S210130

Reexamination Certificate

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11217524

ABSTRACT:
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes a magnetic element and a selection transistor. The magnetic element may be programmed using spin transfer induced switching by a write current driven through the magnetic element. The selection transistor includes a source and a drain. The plurality of magnetic storage cells are grouped in pairs. The source of the selection transistor for one magnetic storage cell of a pair shares the source with the selection transistor for another magnetic storage cell of the pair.

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