Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-08-27
2010-06-29
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S790000
Reexamination Certificate
active
07745352
ABSTRACT:
Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods may also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may also include removing the acidic vapor from the semiconductor processing chamber. Systems to deposit a silicon oxide layer on a substrate are also described.
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PCT International Search Report and Wr
Mallick Abhijit Basu
Nemani Srinivas D.
Weidman Timothy W.
Applied Materials Inc.
Brown Valerie
Nguyen Ha Tran T
Townsend and Townsend and Crew
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