Curing methods for silicon dioxide multi-layers

Details Curing methods for silicon dioxide multi-layers Curing methods for silicon dioxide multi-layers

2010-06-17

2010-11-02

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S790000

Reexamination Certificate

active

07825044

ABSTRACT:
Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer filling a portion of a trench on the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may further include depositing additional silicon oxide over the cured silicon oxide to fill the trench. The methods may also include removing the acidic vapor from the semiconductor processing chamber.

REFERENCES:
patent: 2004/0152342 (2004-08-01), Li et al.
patent: 2004/0180557 (2004-09-01), Park et al.
patent: 2007/0026689 (2007-02-01), Nakata et al.

Affiliated with

Also associated with

Rating

Curing methods for silicon dioxide multi-layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Curing methods for silicon dioxide multi-layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Curing methods for silicon dioxide multi-layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4251866