Cube maskless lead open process using chemical mechanical polish

Details Cube maskless lead open process using chemical mechanical polish Cube maskless lead open process using chemical mechanical polish

1995-06-05

1997-03-11

Schilling, Richard L.

Etching a substrate: processes

Forming or treating electrical conductor article

Forming or treating lead frame or beam lead

216 16, 216 72, 437208, 437915, 437228, C03C 1500, C03C 2506, C23F 100, B44C 122

Patent

active

056097727

ABSTRACT:
A semi-conductor device having a conductive lead with an exposed tip disposed within a first insulative material, which is in turn disposed between insulated first and second integrated circuit chips is disclosed. The first insulative material is etched to form a recess after which a second insulative material is deposited on the access plane of the chips and within the recess. The tip of the wire lead is then exposed by either a chemical mechanical polish or by a wet etch/develop process.

REFERENCES:
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patent: 5016138 (1991-05-01), Woodman
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patent: 5279991 (1994-01-01), Minahan et al.
Srinivasan Sivaram et al., Planarizing Interlevel Dielectrics by Chemical-Mechanical Polishing, May 1992.
Iqbal Ali et al., Chemical-mechanical polishing of interlayer dielectric: A review.

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