Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Reexamination Certificate
2007-05-22
2007-05-22
Markoff, Alexander (Department: 1746)
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
C134S003000, C438S692000
Reexamination Certificate
active
09645690
ABSTRACT:
A polishing pad is cleaned of Cu CMP by-products, subsequent to planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising about 0.1 to about 3.0 wt. % of at least one organic compound having one or more amine or amide groups, an acid or a base in an amount sufficient to adjust the pH of the composition to about 5.0 to about 12.0, the remainder water. Embodiments comprise ex situ cleaning of a rotating polishing pad by applying a solution having a pH of about 5.0 to about 12.0 at a flow rate of about 100 to about 600 ml/min. for about 3 to about 20 seconds after polishing a wafer having a Cu-containing surface and then removing the cleaning solution from the polishing pad by high pressure rinsing with water.
REFERENCES:
patent: 3889753 (1975-06-01), Richardson
patent: 4090563 (1978-05-01), Lybarger et al.
patent: 4169337 (1979-10-01), Payne
patent: 4541945 (1985-09-01), Anderson et al.
patent: 4588421 (1986-05-01), Payne
patent: 4752628 (1988-06-01), Payne
patent: 4867757 (1989-09-01), Payne
patent: 4954142 (1990-09-01), Carr et al.
patent: 5084071 (1992-01-01), Nenadic et al.
patent: 5167667 (1992-12-01), Prigge et al.
patent: 5225034 (1993-07-01), Yu et al.
patent: 5264010 (1993-11-01), Brancaleoni et al.
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5478436 (1995-12-01), Winebarger et al.
patent: 5509970 (1996-04-01), Shiramizu
patent: 5527423 (1996-06-01), Neville et al.
patent: 5614444 (1997-03-01), Farkas et al.
patent: 5645682 (1997-07-01), Skrovan
patent: 5662769 (1997-09-01), Schonauer et al.
patent: 5692947 (1997-12-01), Talieh et al.
patent: 5700383 (1997-12-01), Feller et al.
patent: 5738574 (1998-04-01), Tolles et al.
patent: 5738800 (1998-04-01), Hosali et al.
patent: 5756398 (1998-05-01), Wang et al.
patent: 5769689 (1998-06-01), Cossaboon et al.
patent: 5830280 (1998-11-01), Sato et al.
patent: 5840629 (1998-11-01), Carpio
patent: 5876508 (1999-03-01), Wu et al.
patent: 5879226 (1999-03-01), Robinson
patent: 5911835 (1999-06-01), Lee et al.
patent: 5932486 (1999-08-01), Cook et al.
patent: 5958794 (1999-09-01), Bruxvoort et al.
patent: 5981454 (1999-11-01), Small
patent: 6033993 (2000-03-01), Love, Jr. et al.
patent: 6042741 (2000-03-01), Hosali et al.
patent: 6046110 (2000-04-01), Hirabayashi et al.
patent: 6054379 (2000-04-01), Yau et al.
patent: 6068879 (2000-05-01), Pasch
patent: 6074949 (2000-06-01), Schonauer et al.
patent: 6077337 (2000-06-01), Lee
patent: 6083840 (2000-07-01), Mravic et al.
patent: 6096652 (2000-08-01), Watts et al.
patent: 6117775 (2000-09-01), Kondo et al.
patent: 6117783 (2000-09-01), Small et al.
patent: 6123088 (2000-09-01), Ho
patent: 6156661 (2000-12-01), Small
patent: 6352595 (2002-03-01), Svirchevski et al.
patent: 6498131 (2002-12-01), Small et al.
patent: 6852682 (2005-02-01), Small et al.
patent: 39 39 661 (1991-06-01), None
patent: 0 401 147 (1990-12-01), None
patent: 0 496 605 (1992-07-01), None
patent: 0 620 293 (1994-10-01), None
patent: 0 620 293 (1994-10-01), None
patent: 0 859 407 (1998-08-01), None
patent: 0 860 860 (1998-08-01), None
patent: 0 913 442 (1999-05-01), None
patent: 2 722 511 (1996-01-01), None
patent: 93/10277 (1993-05-01), None
patent: WO 98/49723 (1998-11-01), None
patent: WO 99/46353 (1999-09-01), None
patent: WO 00/30159 (2000-05-01), None
patent: WO 00/36037 (2000-06-01), None
patent: WO 00/49647 (2000-08-01), None
patent: WO 00/53691 (2000-09-01), None
patent: 00/59029 (2000-10-01), None
Ethylenediamine, internet publication www.chemicalland21.com.
Selwyn et al, Removal of Chloride and Iron Ions from Archaeological Wrought Iron with Sodium Hydroxide and Ethylene Diamine Solutions, Studies in Conservation, vol. 50, issue 2, May 2005.
Kern, “Radiochemical Study of Semiconductor Surface Contamination”,RCA Review, Jun. 1970, vol. 31, pp. 207-264.
Kaufman, F.B., et al., “Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects”,J. Electrochem. Society, pp. 3460-3465 (1991).
Brusic, V., et al., “Copper Corrosion with and without Inhibitors”,J. Electrochem. Soc., vol. 138, No. 8, Aug. 1991.
Zhao, et al., “Copper CMP Cleaning Using Brush Scrubbing”, Feb. 19-20, 1998 CMP-MIC Conference.
Brusic, V. et al, “Copper Corrosion With and Without Inhibitors”,Electrochem. Soc., 138:8, 2253-2259, Aug. 1991.
Brusic, et al. “Copper Corrosion With and Without Inhibitors,” J. Electrochem. Soc., vol. 138, No. 8, Aug. 1991.
Hymes, et al., “The Challenges of the Copper CMP Clean”,Semiconductor International, pp. 117-122 (1998).
Pak, “Impact of EDTA on Junction and Photolith Qualities”,Extended Abstracts, Oct. 1980, vol. 80, No. 2, pp. 1241-1243.
Li Shijian
Redeker Fred C.
Sun Lizhong
Applied Materials Inc.
Markoff Alexander
Patterson & Sheridan LLP
LandOfFree
Cu CMP polishing pad cleaning does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cu CMP polishing pad cleaning, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cu CMP polishing pad cleaning will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3733731