Crosstalk improvement through P on N structure for image sensor

Details Crosstalk improvement through P on N structure for image sensor Crosstalk improvement through P on N structure for image sensor

2007-03-06

2010-06-08

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27133

Reexamination Certificate

active

07732844

ABSTRACT:
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.

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Chinese Patent Office, Office Action of Nov. 7, 2008, Chinese Patent Application No. 2007101671709, 6 pages.

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