Crossbar diode-switched magnetoresistive random access...

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S173000, C365S158000, C365S055000, C365S130000

Reexamination Certificate

active

07826258

ABSTRACT:
A magnetic memory or MRAM memory system comprising an M×N crossbar array of MRAM cells. Each memory cell stores binary data bits with switchable magnetoresistive tunnel junctions (MJT) where the electrical conductance changes as the magnetic moment of one electrode (the storage layer) in the MJT switches direction. The switching of the magnetic moment is assisted by a phase transition interlayer that transitions from antiferromagnetic to ferromagnetic at a well defined, above ambient temperature.

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