Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2008-07-09
2010-06-08
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S072000
Reexamination Certificate
active
07733685
ABSTRACT:
A cross point memory cell includes a portion of a first distributed diode, a portion of a second distributed diode, a memory layer located between the portion of the first distributed diode and the portion of a second distributed diode, a bit line electrically connected to the first distributed diode, and a word line electrically connected to the second distributed diode.
REFERENCES:
patent: 3569945 (1969-01-01), Ho
patent: 3693173 (1972-09-01), Heightley et al.
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5835396 (1998-11-01), Zhang
patent: 5915167 (1999-06-01), Leedy
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6579760 (2003-06-01), Lung
patent: 6618295 (2003-09-01), Scheuerlein
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 6912153 (2005-06-01), Tihanyi
patent: 7035141 (2006-04-01), Tripsas et al.
patent: 7106652 (2006-09-01), Scheuerlein
patent: 7283383 (2007-10-01), Kang
patent: 2004/0160819 (2004-08-01), Rinerson et al.
patent: 2005/0180203 (2005-08-01), Lin et al.
patent: 2005/0269553 (2005-12-01), Sen et al.
patent: 2006/0002173 (2006-01-01), Parkinson et al.
patent: 2006/0006463 (2006-01-01), Islam et al.
patent: 2009/0067229 (2009-03-01), Kang et al.
patent: 2009/0180309 (2009-07-01), Liu
patent: 2010/0008123 (2010-01-01), Scheuerlein
patent: 1 659 593 (2006-05-01), None
patent: 1 892 722 (2008-02-01), None
patent: WO 03/085675 (2003-10-01), None
patent: WO 2008/062688 (2008-05-01), None
patent: WO 2008/140979 (2008-11-01), None
patent: WO 2008/157049 (2008-12-01), None
U.S. Appl. No. 09/560,626, filed Apr. 28, 2000, Knall.
U.S. Appl. No. 09/638,428, filed Aug. 14, 2000, Johnson.
U.S. Appl. No. 09/897,705, filed Jun. 29, 2001, Kleveland.
U.S. Appl. No. 10/185,508, filed Jun. 27, 2002, Cleeves.
U.S. Appl. No. 11/287,452, filed Nov. 23, 2005, Herner.
Peter K. Naji et al., “A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM”, Digest of Technical Papers of the 2001 IEEE International Solid-State Circuits Conference, ISSCC 2001/Session 7/Technology Directions: Advanced Technologies/7.6, Feb. 6, 2001, 3 pgs.
U.S. Appl. No. 12/216,677, filed Jul. 9, 2008, Scheuerlein.
International Search Report and Written Opinion mailed Aug. 21, 2009, received in PCT/US2009/049513.
International Search Report and Written Opinion mailed Aug. 28, 2009, received in PCT/US2009/049502.
Fasoli Luca
Scheuerlein Roy E.
Foley & Lardner LLP
Nguyen Tan T.
SanDisk 3D LLC
LandOfFree
Cross point memory cell with distributed diodes and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cross point memory cell with distributed diodes and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cross point memory cell with distributed diodes and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4199589