Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-02-01
2005-02-01
Yoha, Connie C. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S157000, C365S185240, C365S046000, C365S048000
Reexamination Certificate
active
06850429
ABSTRACT:
Providing a cross point, memory array with memory plugs exhibiting a characteristic hysteresis. The memory plugs exhibit a hysteresis that, in the low resistive state, the first write threshold voltage is the point above which any voltages applied across the memory plug have substantially no effect on the resistive state and below which a voltage pulse will alter the resistance of the memory plug. Similarly, in the high resistive state, the second write threshold voltage is the point below which any voltages applied across the memory plug have substantially no effect on the resistive state and above which a voltage pulse will alter the resistance of the memory plug. The read voltages applied to the memory plug are typically above the first write threshold voltage and lower than the second write threshold voltage.
REFERENCES:
patent: 5801980 (1998-09-01), Wong et al.
patent: 6072716 (2000-06-01), Jacobson et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6504221 (2003-01-01), Tran et al.
patent: 6507512 (2003-01-01), Honigschmid
patent: 6531371 (2003-03-01), Hsu et al.
patent: 20010023992 (2001-09-01), Doll
patent: 20010048608 (2001-12-01), Numata et al.
patent: 20020000597 (2002-01-01), Okazawa
patent: 20020001224 (2002-01-01), Poechmueller
patent: 20030001178 (2003-01-01), Hsu et al.
patent: 20030003675 (2003-01-01), Hsu
Asamitsu, A. et al., “Current switching of resistive states in magnetoresistive manganites”, Nature, vol. 388, Jul. 3, 1997, 50-52.
Beck, A. et al., “Reproducible switching effect in thin oxide films for memory applications”, Applied Physics Letters, vol. 77, No. 1, Jul.3, 2000, 139-141.
Guo-Qiang Gong, “Colossal magnetoresistance of 1 000 000-fold magnitude achieved in the antiferromagnetic phase of La1-xCaxMnO3”, Applied Physics Letters, vol. 67, No. 12, Sep. 18, 1995,1783-1785.
Khartsev, S.I. et al., “Colossal magnetoresistance in ultrathin epitaxial La1-xCaxMnO3Films”, Journal of Applied Physics, vol. 87, No. 5, Mar. 1, 2000, 2394-2399.
Liu, S.Q., et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”, Applied Physics Letters, vol. 76, No. 19, May 8, 2000, 2749-2651.
Liu, S.Q., et al., “A New Concept For Non-Volatile Memory: Electric-Pulse Induced Reversible Resistance Change Effect In Magnetoresistive Films”, Space Vacuum Epitaxy Center, University of Huston, Huston TX, 7 Pages.
Rossel, C. et al., “Electrical current distribution across a metal-insulator-metal structure during bistable switching”, Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, 2892-2898.
Watanabe, Y. et al., “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3single crystal”, Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, 3738-3740.
Zhao, Y.G. et al., “Effect of oxygen content on the structural, transport, and magnetic properties of La1-δMn1-δO thin films”, Journal of Applied Physics, vol. 86, No. 11, Dec. 1, 1999, 6327-6330.
Zhuang W.W. et al, “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory(RRAM)” IEEE 2002, 0-7803-7463-X, 4 pages.
Chevallier Christophe J.
Hsia Steve Kuo-Ren
Kinney Wayne
Longcor Steven W.
Rinerson Darrell
Malino Morgan
Unity Semiconductor Corporation
Yoha Connie C.
LandOfFree
Cross point memory array with memory plugs exhibiting a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cross point memory array with memory plugs exhibiting a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cross point memory array with memory plugs exhibiting a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3451585