Cross-linking polymer for organic anti-reflective coating,...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S271100, C430S018000, C430S325000, C430S326000, C430S311000, C430S319000, C430S327000, C430S330000, C430S331000, C525S328700, C525S384000

Reexamination Certificate

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10989221

ABSTRACT:
A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.

REFERENCES:
patent: 6338934 (2002-01-01), Chen et al.
patent: 6395451 (2002-05-01), Jung et al.
patent: 6818380 (2004-11-01), Maemori et al.
patent: 6871656 (2005-03-01), Mullee
patent: 2005/0112497 (2005-05-01), Jung

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